MOSFET TO22FP DPAK IPAKSL CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. 1 2 tab Drain Pin 2, Tab tab Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Gate Pin 1 Source Pin Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 65 V RDS(on),max 4 mω Id. 14.7 A Qg.typ 2 nc ID,pulse A Eoss@4V 2.8 µj Type/OrderingCode Package Marking RelatedLinks IPA6R4CE PGTO 22 FullPAK IPD6R4CE PGTO 252 6S4CE see Appendix A IPS6R4CE PGTO 251 1 2161
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ Thermal characteristics.................................................................... Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Test Circuits........................................................................... 12 Package Outlines....................................................................... 1 Appendix A............................................................................ 16 Revision History........................................................................ 17 Trademarks........................................................................... 17 Disclaimer............................................................................ 17 2 2161
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 14.7 9. A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse A TC=25 C Avalanche energy, single pulse EAS 21 mj ID=1.8A; VDD=5V; see table 11 Avalanche energy, repetitive EAR.2 mj ID=1.8A; VDD=5V; see table 11 Avalanche current, repetitive IAR 1.8 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...48V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation (Non FullPAK) TO252, TO251 Power dissipation (FullPAK) TO22FP Ptot 112 W TC=25 C Ptot 1 W TC=25 C Storage temperature Tstg 4 15 C Operating junction temperature Tj 4 15 C Continuous diode forward current IS 1.4 A TC=25 C Diode pulse current 2) IS,pulse A TC=25 C Reverse diode dv/dt ) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C see table 9 Maximum diode commutation speed dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C see table 9 Mounting torque (FullPAK) TO22FP Insulation withstand voltage for TO22FP 5 Ncm M2.5 screws VISO 25 V Vrms,TC=25 C,t=1min 2Thermalcharacteristics TableThermalcharacteristics(FullPAK)TO22FP Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.6 in.) from case for 1s 1) Limited by Tj max. TO252 equivalent,maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max ) IdenticallowsideandhighsideswitchwithidenticalRG 2161
Table4ThermalcharacteristicsTO252,TO251 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.12 C/W Thermal resistance, junction ambient RthJA 62 C/W device on PCB, minimal footprint Thermal resistance, junction ambient for SMD version Soldering temperature, wave & reflow soldering allowed RthJA 5 45 C/W Tsold 26 C reflow MSL1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. 4 2161
Electricalcharacteristics attj=25 C,unlessotherwisespecified Table5Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=.25mA Gate threshold voltage V(GS)th 2.5..5 V VDS=VGS,ID=.mA Zero gate voltage drain current IDSS 1 1 µa VDS=6,VGS=V,Tj=25 C VDS=6,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on).4.89.4 Ω VGS=1V,ID=.8A,Tj=25 C VGS=1V,ID=.8A,Tj=15 C Gate resistance RG 7.5 Ω f=1mhz,opendrain Table6Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 7 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 46 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 16 pf ID=constant,VGS=V,VDS=...48V Turnon delay time td(on) 11 ns Rise time tr 9 ns Turnoff delay time td(off) 56 ns Fall time tf 8 ns VDD=4V,VGS=1V,ID=4.8A, RG=.4Ω;seetable1 VDD=4V,VGS=1V,ID=4.8A, RG=.4Ω;seetable1 VDD=4V,VGS=1V,ID=4.8A, RG=.4Ω;seetable1 VDD=4V,VGS=1V,ID=4.8A, RG=.4Ω;seetable1 Table7Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 4 nc VDD=48V,ID=4.8A,VGS=to1V Gate to drain charge Qgd 16 nc VDD=48V,ID=4.8A,VGS=to1V Gate charge total Qg 2 nc VDD=48V,ID=4.8A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=48V,ID=4.8A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%Vo(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%Vo(BR)DSS 5 2161
Table8Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=4.8A,Tj=25 C Reverse recovery time trr 29 ns Reverse recovery charge Qrr. µc Peak reverse recovery current Irrm 21 A VR=4V,IF=4.8A,diF/dt=1A/µs; see table 9 VR=4V,IF=4.8A,diF/dt=1A/µs; see table 9 VR=4V,IF=4.8A,diF/dt=1A/µs; see table 9 6 2161
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) 12 11 1 9 8 Diagram2:Powerdissipation(FullPAK) 5 25 Ptot[W] 7 6 5 Ptot[W] 2 15 4 1 2 5 1 25 5 75 1 125 15 TC[ C] Ptot=f(TC) 25 5 75 1 125 15 TC[ C] Ptot=f(TC) Diagram:Max.transientthermalimpedance(NonFullPAK) 1 1 Diagram4:Max.transientthermalimpedance(FullPAK) 1 1.5 ZthJC[K/W] 1 1 1.5.2.1.5.2 ZthJC[K/W] 1 1 1.2.1.5.2.1.1 single pulse single pulse 1 2 1 5 1 4 1 1 2 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 1 2 1 5 1 4 1 1 2 1 1 1 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 7 2161
Diagram5:Safeoperatingarea(NonFullPAK) 1 2 Diagram6:Safeoperatingarea(FullPAK) 1 2 1 1 1 µs 1 µs 1 µs 1 1 1 µs 1 µs 1 µs 1 ms 1 ms 1 1 ms ID[A] 1 DC ID[A] 1 1 DC 1 1 1 2 1 2 1 1 1 1 1 1 2 1 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 4 1 1 1 1 2 1 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) 1 2 Diagram8:Safeoperatingarea(FullPAK) 1 2 ID[A] 1 1 1 DC 1 µs 1 µs 1 µs 1 ms ID[A] 1 1 1 1 1 1 µs 1 µs 1 µs 1 ms 1 ms DC 1 1 1 2 1 2 1 1 1 1 1 1 2 1 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 4 1 1 1 1 2 1 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 8 2161
Diagram9:Typ.outputcharacteristics Diagram1:Typ.outputcharacteristics 25 1 V 2 V 2 8 V 2 V 1 V 8 V 15 2 7 V ID[A] 15 7 V ID[A] 1 6 V 1 6 V 5.5 V 5.5 V 5 5 V 5 5 V 4.5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram11:Typ.drainsourceonstateresistance 1.5 Diagram12:Drainsourceonstateresistance 1. 1.4 1..9.8 1.2.7 RDS(on)[Ω] 1.1 1..9 5 V 5.5 V 6 V 6.5 V 7 V 1 V RDS(on)[Ω].6.5 98% typ.8.4.7..6.2.5 5 1 15 2 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS.1 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=.8A;VGS=1V 9 2161
Diagram1:Typ.transfercharacteristics 25 25 C Diagram14:Typ.gatecharge 1 9 8 2 7 6 12 V 48 V ID[A] 15 15 C VGS[V] 5 4 1 5 2 1 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 5 1 15 2 25 5 Qgate[nC] VGS=f(Qgate);ID=4.8Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode 1 2 25 C 125 C Diagram16:Avalancheenergy 225 2 175 1 1 15 IF[A] EAS[mJ] 125 1 1 75 5 25 1 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 25 5 75 1 125 15 Tj[ C] EAS=f(Tj);ID=1.8A;VDD=5V 1 2161
Diagram17:Drainsourcebreakdownvoltage 7 Diagram18:Typ.capacitances 1 4 68 66 1 Ciss 64 VBR(DSS)[V] 62 6 C[pF] 1 2 Coss 58 56 1 1 54 Crss 52 75 5 25 25 5 75 1 125 15 175 Tj[ C] VBR(DSS)=f(Tj);ID=.25mA 1 1 2 4 5 VDS[V] C=f(VDS);VGS=V;f=1MHz Diagram19:Typ.Cossstoredenergy 4..5. 2.5 Eoss[µJ] 2. 1.5 1..5. 1 2 4 5 VDS[V] Eoss=f(VDS) 11 2161
5TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I V DS V DS(peak) V DS V DS R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table1Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 9% V DS V GS V GS 1% t d(on) t r t d(off) t f t on t off Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS 12 2161
6PackageOutlines ),/ /,..,/*6*45,(+*5 MIN MAX MIN MAX ' 4.5 4.9.177.19 '# 2.4 2.85.92.112 '$ 2.42 2.86.95.11 9.65.9.26.5 9#.95 1.8.7.54 9$.95 1.51.7.59 9%.65 1.8.26.54 9&.65 1.51.26.59 ; ) )# * = =# +..# @.4.6 15.67 16.15 8.97 9.8 1. 1.65 2.54 (BSC) 28.7 12.78 2.8 2.95.15 5.8 29.75 1.75.45.8.5.16.617.5.94 1.1.5.111.116.124.87.419.1 (BSC).2 Dimensions do not include mold flash, protrusions or gate burrs.25.66 1.171.541.16.1.18 )1(7/*6 1" Z8B19 5('.* 2.5 *7412*' 241*(6,1 2.5,557* )'6* 55214 4*8,5,1 4 5mm Figure 1 Outline PGTO 22 FullPAK, dimensions in mm/inches 1 2161
6V CoolMOS CE Power Transistor IPA6R4CE, IPD6R4CE, IPS6R4CE *) mold flash not included Figure 2 DIM A A1 b b2 b c c2 D D1 E E1 e e1 N H L L L4 F1 F2 F F4 F5 F6 MILLIMETERS MIN MAX 2.16 2.41..15.64.89.65 1.15 5. 5.5.46.6.46.98 5.97 6.22 5.2 5.84 6.4 6.7 4.7 5.6 2.29 (BSC) 4.57 (BSC) 9.4 1.18.9.51 1.6 6.4 2.2 5.8 5.76 1.2 1.48 1.7 1.25 1. MIN.85..25.26.197.18.18.25.198.252.185.7.46.5.2 INCHES MAX.95.6.5.45.217.24.9.245.2.265.22.9 (BSC).18 (BSC).41.67.49.9.417.252.87.228.227.47 Outline PGTO 252, dimensions in mm/inches DOCUMENT NO. Z8B28 SCALE 2. 2. EUROPEAN PROJECTION ISSUE DATE 19215 REVISION 5 4mm 14 2161
6V CoolMOS CE Power Transistor IPA6R4CE, IPD6R4CE, IPS6R4CE DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS INCHES MIN MAX MIN MAX 2.18.8.64.65 4.95.46.46 5.97 2.4 1.14.89 1.15 5.5.59.89 6.22.86.1.25.26.195.18.18.25.94.45.5.45.217.2.5.245 5.4 5.55.198.219 6.5 6.7.25.265 4.6 5.21.181.25 2.29 4.57.9.18..8.6 1.25.118.1.142.49.88 1.28.5.5 DOCUMENT NO. Z8B29 SCALE 2. 2. EUROPEAN PROJECTION ISSUE DATE 211215 REVISION 6 4mm Figure Outline PGTO 251, dimensions in mm/inches 15 2161
6V CoolMOS CE Power Transistor IPA6R4CE, IPD6R4CE, IPS6R4CE 7 Appendix A Table 12 Related Links IFX CoolMOS TM CE Webpage: www.infineon.com IFX CoolMOS TM CE application note: www.infineon.com IFX CoolMOS TM CE simulation model: www.infineon.com IFX Design tools: www.infineon.com 16 2161
6V CoolMOS CE Power Transistor IPA6R4CE, IPD6R4CE, IPS6R4CE Revision History IPA6R4CE, IPD6R4CE, IPS6R4CE Revision: 2161 Previous Revision Date Subjects (major changes since last revision) 214925 Release of final version 2161 Modified Id, Rthjc. Modified SOA & Zthjc curves. Added IPAK_SL package Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq!, TRENCHSTOP, TriCore. Trademarks updated August 215 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 216 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 17 2161